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M30L40C
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Vishay General Semiconductor
Revision: 20-Nov-12
3
Document Number: 89012
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Fig. 3 -
Typical Instantaneous Forward Characteristics Per Diode
Fig. 4 -
Typical Reverse Characteristics Per Diode
Fig. 5 -
Typical Junction Capacitance Per Diode
Fig. 6 -
Typical Transient Thermal Impedance Per Diode
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
0.1
1
10
100
0 0.2 0.4 0.6 0.8
Instantaneous Forward Voltage (V)
Instantaneo
u
s For
w
ard C
u
rrent (A)
TJ
= 150 °C
TJ
= 125 °C
TJ
= 100 °C
TJ
= 25 °C
0.01
0.1
1
100
1000
10
10 20 30 40 50 60 70
80 90 100
Percent of Rated Peak Reverse Voltage (%)
Instantaneo
u
s Re
v
erse C
u
rrent (mA)
TJ
= 150 °C
TJ
= 125 °C
TJ
= 100 °C
TJ
= 25 °C
100
1000
10 000
0.1 1 10 100
Reverse Voltage (V)
J
u
nction Capaci
tance (pF)
0.1
1
10
0.01 0.1 1 10 100
t - Pulse Duration (s)
Transient Thermal Impedance (°C/W)
Junction to Case
TO-220AB
0.113 (2.87)
0.103 (2.62)
0.370 (9.40)
0.360 (9.14)
0.415 (10.54) MAX.
0.635 (16.13)
0.625 (15.87)
PIN
0.160 (4.06)
0.140 (3.56)
0.057 (1.45)
0.045 (1.14)
0.105 (2.67)
0.095 (2.41)
0.104 (2.65)
0.096 (2.45)
0.205 (5.20)
0.195 (4.95)
0.035 (0.90)
0.028
(0.70)
0.154 (3.91)
0.148
(3.74)
1
3
2
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
0.145 (3.68)
0.135 (3.43)
0.350 (8.89)
0.330 (8.38)
1.148
(29.16)
1.118
(2
8.40)
0.560 (14.22)
0.530 (13.46)
0.022 (0.56)
0.014 (0.36)
0.110 (2.79)
0.100 (2.54)
0.603 (15.32)
0.573 (14.55)
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